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Recess gate AlGaN/GaN HEMTs with the overlap gate metal structure were fabricated. The overlap gate metal structure effectively reduced the short channel effect and the drain conductance at the recess gate HEMTs with a short recess‐gate length of 0.4 μm. The drain conductance of the HEMTs with the overlap gate metal length of 2.0 μm was 1/5 lower than with the length of 0.4μm. Since the recess gate...
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