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In this work, H2O‐Al2O3/O3‐Al2O3 insulating bilayers were grown on GaN by atomic‐layer deposition (ALD) technique using H2O vapor and O3 as oxidants. The electrical and material properties show that the H2O‐Al2O3/O3‐Al2O3 stack structure appeared to be an appropriate dielectric for GaN MOS devices that had low leakage current densities, high breakdown voltages, and good capacitance–voltage (C–V) curves...
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