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This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different methods to form the lateral p-n grids below the Schottky contact: 1) Mg implantation into n-GaN to form p-wells and 2) Si implantation into p-GaN to form n-wells. Specific differential ON-resistances (${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) of...
Vertical GaN Junction barrier Schottky (JBS) diodes are fabricated on hydride vapor phase epitaxy (HVPE) GaN substrates. The p-type JBS gridded regions were formed by selective area doping by Mg ion implantation followed by an activation anneal. Implantation was performed into a 10 μm thick unintentionally doped GaN layer grown by metal organic chemical vapor deposition (MOCVD). Evaporating Pd/Au...
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