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We report on axial pn-junctions in GaAs nanowires. The nanowires were grown by MOVPE on (111)B GaAs substrates using the vapor–liquid–solid mechanism in combination with Au seed particles. At the low growth temperature of 400°C any additional growth on the nanowire sidewalls can be excluded such that a pure axial pn-junction is realized. p-Type doping was provided by diethyl zinc, while tetraethyl...
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