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Using ab initio calculations a comparison between InxGa1−xN, InxAl1−xN and GaxAl1−xN is performed to examine the role of indium in nitride alloys. The band gap, Eg, as well as its pressure coefficient, dEg/dp, are studied as functions of chemical composition, x. Following theoretical and experimental suggestions about the crucial role of In‐segregation in InxGa1−xN and InxAl1−xN, different arrangements...
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