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The group‐III nitride and the group‐II oxide semiconductors have direct band gaps, which cover the ultraviolet to infrared energy range. In this work we calculate the band gaps and built‐in electric field of the polar wurtzite GaN/AlN and ZnO/MgO Short Period Superlattices (SPSLs). In many respects GaN and AlN are similar to ZnO and MgO, respectively, especially regarding the band gaps and the lattice...
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