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Spatially resolved cathodoluminescence (CL) microscopy is used to study semipolar gallium nitride (GaN) grown out of trenches with c‐plane‐like sidewalls etched into the r‐plane sapphire substrate. The beneficial effect of growing locally c‐GaN on c‐sapphire and subsequent switching to the semipolar growth mode manifests in bending of threading dislocations (TDs) and a +c‐wing of excellent...
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