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Polarization‐field reduction in c‐plane InGaN multi‐quantum well (MQW) structures is achieved by pulsed‐flow growth of quaternary AlInGaN barriers using metalorganic vapor phase epitaxy (MOVPE). The pulsed‐flow growth allows for precise control of the quaternary composition at very low growth rate. In photoluminescence (PL) experiments a blue‐shift of the MQW emission wavelength is observed by successive...
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