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In this paper, we present an enhancement of breakdown voltage in AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility-transistor devices by introducing a magnesium doping layer in AlGaN buffer layer under the 2DEG channel. The optimized electron confinement and mitigated electric field peak under the drain side of the gate in DH-HEMT along with more evenly distributed electric field due to...
In this letter, we proposed a new power High Electron Mobility Transistor (HEMT) with partial stepped recess in the drain access region. This approach represents a new way to increase the breakdown voltage by 100%, which is very important in higher voltage applications. The use of drain access region recesses allows a 43% decrease of the peak electric field and only a 1.91% increase of the drain access...
In this paper, we have investigated the effectiveness of employing the drain field-plate technique to enhance the breakdown voltage of single source field-plate (SSFP) AlGaN/GaN power high electron mobility transistors (HEMTs). A systematic procedure is provided for designing this new double drain and source field-plate (DDSFP) structure, using two dimensional simulation to achieve the maximum improvement...
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