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We report thermal properties improvement of aluminum nitride (AlN) microring resonator by adopting epitaxial material and pedestal structure. With optimized inductively coupled plasma (ICP) dry etching using Cl2/BCl3/Ar mixture, pedestal microring resonators have been fabricated on epitaxial AlN. Transmission measurement reveals a loaded quality factor of ∼1×104 at under-coupled condition, corresponding...
Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using Cl 2 /BCl 3 /Ar mixture has been investigated. The etch rate of AlN increases significantly with the addition of BCl 3 , and an etch rate as high as 258 nm/min has been demonstrated. High selectivity of AlN over Ni mask has been realized, and the etch rate of Ni is almost zero for...
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