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Ion‐implant isolated vertical GaN p‐n junction diodes fabricated with epitaxial lift‐off (ELO) from GaN substrates are demonstrated. For the ELO process, a band‐gap selective photoelectrochemical (PEC) wet etch with a pseudomorphic InGaN release layer is utilized. Compared with devices isolated using mesa etching, the ion‐implant isolated devices exhibit more ideal forward current–voltage characteristics...
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