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The intensive photoluminescence (PL) band corresponding to the self‐trapped excitons (STEs) at surface Si–Si dimers has been observed for the multilayer periodical nanostructures (SiO/nc‐Si/) with average nanocrystal size of 2.5 and 3.5 nm. The maximum of the band is located at 1.06 m (1.17 eV) and does not depend on the nanocrystal size. The decay times of the PL band are 5.9 and 5.3 ms for the...
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