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We obtained single-mode lasing in GaN nanowires by using a limited number of cavity modes and a narrow gain spectra. The fabrication was achieved by a top-down technique in high quality GaN films.
III-nitride solar cells comprised of large-area arrays of GaN-InGaN core-shell nanowires electrically connected by a p-InGaN canopy are demonstrated. This proof-of-concept hybrid film-nanowire device enables various advantages including elastic strain relief within the InGaN shell.
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