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The valence band offset (VBO) at the interface between indium nitride (InN) and selected oxide materials (Al2O3, TiO2, In2O3 and HfO2) is determined using X‐ray photoelectron spectroscopy (XPS). For exact VBO determination, InN samples with oxide cap layers of varying thickness are investigated. The VBO values are extrapolated by linear regression of the thickness dependent energetic distances ΔE...
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