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Positron annihilation spectroscopy has been used to study vacancy defects formed in PA‐MBE grown carbondoped indium nitride. The carbon concentration of doped samples varied in the range from 1.5 × 1017 cm–3 to 2.5 × 1018 cm–3. The experimental data indicates the existence of vacancy complexes containing both In and N vacancies, with the VIn component dominant from the positron annihilation point...
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