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In this paper a high order temperature compensation current reference circuit was proposed, which is accomplished by two current source with opposite temperature coefficients (TC) to obtain a smaller TC. The proposed circuit with a simple structure designed in Global Foundries 0.18μm CMOS process, achieving a temperature coefficient of 30.7ppm/°C in the range of −50∼120°C, and the quiescent current...
Differential through silicon vias (TSVs) are commonly used for the differential signaling in three-dimensional (3-D) integration, which may be disturbed by the electromagnetic field of the neighboring signal/ground paths. In this paper, the equivalent circuit model of the differential TSVs is established. Then the induced noise on the differential TSVs from the neighboring single-ended and differential...
This paper presents a methodology to characterize the electrical behaviors of mixed conventional and coaxial through silicon vias (TSVs) network in three-dimensional (3-D) integrated circuits. An equivalent circuit model is established to predict the insertion loss and crosstalk level of the mixed TSV network. By the proposed model, the shielding effectiveness of the outer conductor in coaxial TSV...
The voltage-behind-reactance (VBR) model is used more and more in modeling and simulation of electrical machines due to its improved efficiency and flexibility. So far, the VBR model has been applied to represent the standard three-phase synchronous/induction machines only. It is necessary to extend the VBR model to include multiphase machines that are commonly used in aircraft, ships, and other applications...
The complexity of electromagnetic simulation of high-speed interconnects drastically rises as frequency moves upwards. Although full wave simulation is with high precision and capable of electromagnetic simulation through dc to hundreds of gigahertz, for consideration of high efficiency the quasi-static-electromagnetic-field-based parameters extraction combined with the circuit simulation still remains...
In this paper, influences of the initial stress on the surface micromachining silicon nitride pressure sensor was analyzed and discussed. The residual stress in the diaphragm is a major issue that makes significant difference on the performance of surface micro machined pressure sensors, such as warpage, micro-cracking, delamination, debonding, and nonuniform stress profile of the membrane. The pressure...
The complexity of electromagnetic simulation of high-speed interconnects drastically rises as frequency moves upwards. Although full wave simulation is with high precision and capable of electromagnetic simulation through dc to hundreds of gigahertz, for consideration of high efficiency the quasi-static-electromagnetic-field-based parameters extraction combined with the circuit simulation still remains...
In this paper, influences of the initial stress on the surface micromachining silicon nitride pressure sensor was analyzed and discussed. The residual stress in the diaphragm is a major issue that makes significant difference on the performance of surface micro machined pressure sensors, such as warpage, micro-cracking, delamination, debonding, and nonuniform stress profile of the membrane. The pressure...
Quadrate Flat Package (QFP) is chosen as package mode of chip for typical Hall-effect current sensors. In this paper, taking the deformation behavior of QFD structure under the temperature loading into consideration, according to related physics laws such as Fourier heat transfer law, Stephen-Boltzmann law and Newton's law of cooling, the thermal simulation of packaging for current sensor is implemented...
An equivalent circuit model for low pitch-to-diameter ratio (P/D) through silicon via (TSV) in three-dimensional integrated circuit (3-D IC) is proposed in this paper. The shunt admittance of this model is calculated based on the method of moments which can accurately capture the proximity effect for both a TSV pair and TSV array. The metal-oxide-semiconductor (MOS) capacitance of TSV is also considered...
According to the impedance characteristic curves of linear regulator chip which are measured in different temperatures, making use of chip model and the determination of LSI/IC equivalent model parameter, the resistance, capacitance and inductance parameters of chips in different temperatures are obtained. And the fitted impedance characteristic curves of chips by vector fitting are obtained. By the...
An empirical large-signal model for high power AlGaN/GaN metal-insulator-semiconductor HEMT (GaN MISHEMT) utilizing improved drain current (Ids) and gate charge (Qg) formulation is presented. The proposed modeling equations accurately model the asymmetric bell-shaped transconductance (Gm) characteristics and the peaking behaviors of gate capacitance (C11) over a wide bias range of operation. All the...
In this paper, the characteristic impedance of transmission line and on-die termination (ODT) for Double Data Rate (DDR3) multi-module memory bus were be effectively enhanced signal integrity by particle swarm optimization (PSO) algorithm. The bionic characteristic of PSO has good performance of search for macrocosm and fast convergence. In this case, the equivalent model of the circuit considers...
In this paper, we present an improved drain-source current (I-V) model for HEMT's which is simple and easy to extract, suitable for implementation in simulation tools. A single modeling equation is developed, allowing accurate prediction of both static and dynamic I-V characteristics. The model parameters can be extracted to match the measured data closely for a wide bias range without sacrificing...
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