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This study presents a new design for a single‐junction InAlAs solar cell, which reduces parasitic absorption losses from the low band‐gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti‐reflective coating. The final cell had a 17.9% efficiency under 1‐sun AM1.5 with an anti‐reflective coating...
Epitaxial layers of InAlAs are potential candidates for the top cell in triple-junction photovoltaics on InP. Growth conditions during metalorganic vapor phase epitaxy (MOVPE) of InAlAs affect the material properties and subsequently the device characteristics of the epilayers. Material development of InAlAs lattice-matched to InP using trimethylaluminum (TMAl) and tritertiarybutyl aluminum (TTBAl)...
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