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Thin ELO devices with light management allow for increased quantum dot (QD) absorption without the need for excessive strain management. A growth study was designed to evaluate challenges regarding inverted growth of ELO QDSCs. Two upright GaAs cell designs were investigated: a standard device and a “thick emitter” device. For each design, two QDSCs and a baseline without QDs were grown and fabricated...
Embedded nanostructures such as quantum dots (QDs) have been studied for many applications including enhanced mini-band absorption in intermediate-band solar cells and current matching in multi junction cells. Furthermore, solar cells with QDs have shown a radiation hardness and temperature tolerance that has been improved by adding nanostructures. InAs/GaAs QD cells were grown by MOVPE, fabricated...
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