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This paper reports on the thermal impedance measurement of GaN high‐electron‐mobility‐transistors (HEMTs) using frequency‐resolved gate resistance thermometry. Corrections methods are used to enable measurement on a very broad frequency range up to the MHz range. Transposition to time‐domain is then conducted and allows, for the first time to the author's knowledge, a full determination of the device's...
Transistor's thermal impedance is a parameter of prime importance to predict the device peak temperature in applications of power and RF electronics featuring time‐dependent dissipated power. In the context of the upcoming GaN HEMT technology, an innovative methodology is hereby detailed for the extraction of a transistor thermal dynamic behavior. This technique uses the dependence of the Gate resistance...
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