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Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E 2 phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported...
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