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An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is chosen to determine the eligibility. It is to probe the upper end of two or more neighboring TSVs during the manufacturing right after the blind vias being formed. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. During...
The silicon industry has witnessed a half-century gallop of electronics. When technologies reached their limits, new technologies are budding out and prolong the unbreakable Moore's Law. This time, Through Silicon Via (TSV) is considered the most promising technology trend in the next decade. In this paper, we study the electrical characters of a TSV-bump combination under the ground-signal-ground...
This paper presented a method to examine the electrical characteristics of sidewall insulation layer of through silicon via (TSV), including breakdown voltage and sidewall capacitance. Blind via samples were fabricated for the experiment using deep reactive ion etching. 2μm SiO2 insulation layer was deposited using PECVD (Plasma enhanced chemical vapor deposition). Ti/W/Cu adhesive/barrier/seed layer...
This paper focused on the process of forming sidewall insulation of through silicon via (TSV) which was a challenging bottleneck in 3D integration technologies. In traditional way, etching silicon oxide on via bottom would reduce the thickness of sidewall insulation layer inevitably, which might lead to the failure of TSV sidewall insulation and electrical interconnection characteristic. In this paper,...
In order to analysis the influence of copper ion on aging rate of oil-paper insulation, accelerate thermal aging experiments have been designed and performed on oil-paper insulation at two aging temperatures. A number of characteristic parameters such as dissolved gases, degree of polymerization, furfural content, water content and Acid number of oil have been tested periodically. The experiments...
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