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In this paper, high frequency measurement of TSV structures under different DC bias conditions are carried out. The impact of the MOS capacitance effect of TSV on its transmission performance is analyzed. Capacitance and conductance parameters of TSV are extracted and compared with numerical calculations.
Three-dimensional integration technology is deemed as the most promising alternative in post Moore's Law era. The electrical performance of through silicon vias (TSVs), which are the key enabler for 3D integration, is crucial to modeling and design of 3D systems, especially for high-speed systems. This paper gives a partial review on recent progress in the field with the focus on the high-frequency...
Three-dimensional (3D) integration has been considered as the most promising method to overcome the interconnection bottleneck with through-silicon vias(TSVs) served as vertical signal channels. Three-dimensional integrated circuits (3D IC) meet the demands of high throughput, high scalability and low power consumption for future generation integrated circuits. Crosstalk is the dominant problem in...
With the technology nodes keep advancing, the application of TSV(Through Silicon Via) technology in 3D integration is faced with more challenges. The shift from via-last to via-middle fabrication scheme, the ever-increasing density of TSV, the reduction in supply voltage and the increase in frequency of on-chip local clock, all pose threat to signal/power integrity of the TSV system. In this paper,...
With the technology nodes keep advancing, the application of TSV(Through Silicon Via) technology in 3D integration is faced with more challenges. The shift from via-last to via-middle fabrication scheme, the ever-increasing density of TSV, the reduction in supply voltage and the increase in frequency of on-chip local clock, all pose threat to signal/power integrity of the TSV system. In this paper,...
Three-dimensional (3D) integration has been considered as the most promising method to overcome the interconnection bottleneck with through-silicon vias(TSVs) served as vertical signal channels. Three-dimensional integrated circuits (3D IC) meet the demands of high throughput, high scalability and low power consumption for future generation integrated circuits. Crosstalk is the dominant problem in...
In this paper, electrical characteristic of TSV (Through Silicon Via) is analyzed. Firstly, equivalent circuit model of TSV is summarized. Modeling and electrical analysis of TSV is conducted, in which TSVs with ideal and non-ideal profiles are compared. And then, multi-TSV configuration in silicon interposer is modeled and analyzed. Capacitive and inductive coupling between TSVs are simulated. With...
The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP) and high-speed circuitry design. The authors of this paper explore the 3D full-wave modeling of through Si vias...
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