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A new type of insulated gate bipolar transistor (IGBT)-internal transparent collector (ITC) IGBT is proposed. It is quite similar to that of the PT-IGBT, but a very low carrier lifetime control region is introduced in the P+ substrate near the p-collector/n-buffer junction. Based on quasi-static hypothesis, the ITC-IGBTs' static characteristic equations are given. The turn-off equations are also derived...
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