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In this work, Ce:HfOx films were fabricated and the resistive switching characteristics were investigated. The chemical bonding states of the films were explored by X-ray photoelectron spectroscopy. The annealing process was carried out to modulate the concentration of oxygen vacancies in the film to confirm the dominant role of oxygen vacancies on resistive switching behaviors, which resulted in...
The effects of Cu doping and annealing process on crystal structure and resistive switching (RS) characteristics of HfO 2 films fabricated by RF magnetron sputtering were investigated. The chemical compositions of the films were characterized by X-ray photoelectron spectroscopy. The defects induced by Cu dopants played an important role on the RS characteristics. The enhanced ON/OFF ratio...
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