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Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs and GaN MESFETs is performed, considering a deep donor and a deep acceptor in the semiinsulating GaN buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of a field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that in both FETs, the...
Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and...
Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena...
An equivalent circuit model for gallium nitride-based high electron mobility transistors (GaN-HEMTs) in an exact circuit simulation is proposed. The equivalent circuit contains inherent GaN device properties, such as current-collapse and shot-channel effects. Base on the equivalent model, an power loss simulator was developed. The simulation accuracy was more than 93%. A converter optimum design method...
Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer, and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown that in both FETs, the power slump could be reduced by introducing a field plate,...
Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the...
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