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This paper presents a broadband LNA MMIC design with 0.1um GaAs pHEMT process. The peak power gain of 22dB with 3dB bandwidth of 31GHz from 73GHz to 104GHz, and the minimum noise figure of 3.6dB at 82GHz have been achieved by the 4-stage LNA. The input and output return loss is less than −10dB within full W-band. This well-designed LNA with a compact size of 1.75×0.55mm2 will be utilized for passive...
A hybrid parameter extraction method for GaAs/GaN HEMT modeling is proposed. The electromagnetic (EM) simulation is integrated to de-embed the coupling effects of the extrinsic passive part of the device. By analyzing the coefficient matrix of de-embedded Y-parameters with rearrangements, the intrinsic elements values of HEMTs' small-signal equivalent circuit can be solved uniquely from different...
A novel extrinsic parameter extraction approach is presented for the technology independent modeling of transistors. For the first time, the extrinsic parasitic parameters are optimized based on the conservation of the internal current and charge-sources, which ensures the contour integration of de-embedded intrinsic parameters path independent. A large signal model of a 4 × 100um gate width InGaAs...
In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I–V characteristics of these GaN diodes. In contrast with many complicated...
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