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Oxygen-deficient TiO2/WO3 constructed via the controllable temperature of hydrogen annealing is designed in view of combining the broad visible spectrum absorption with the prominent coupled semiconductor properties. Surface lattice disorder of TiO2/WO3 arises at hydrogen annealing temperature of 200 and 300°C, while critical phase transition from TiO2/WO3 to TiO2/WO2.9 occurs at 400°C, both of which...
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