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Current densities of 1.5ASD and additive concentrations of 15ml/L were used to electroplate the copper into TSV to fabricate the test samples. The samples were annealed at 425°C for 30 minutes in a vacuum furnace with the heating rate of 10°C /min. The annealed samples were thermal cycled with temperature range (25∼325°C), heating & cooling rate (10 °C/min), dwell time of 2 min at the peak and...
The effect of electroplating parameters (filling current density and additive concentration) on the copper in Through-Silicon-Via, abbreviated to TSV-Cu, protrusion during annealing is analyzed. Also, the influence of electro deposition parameters, and the annealing process on the TSV-Cu protrusion during thermal cycling are studied. The result shows that, the distribution of the TSV-Cu protrusion...
Three-dimensional (3D) integrated circuit (IC) technology is considered as the preferred More-than-Moore approach due to its capabilities of miniaturization, high density and multi-function. And through silicon via (TSV) is the key enabling technology of 3D integration. So now TSV is getting more and more attention. However, TSV manufacturing processes are still facing several challenges, one of which...
Isotropic conductive adhesives (ICAs) are a type of interconnect material used more and more widely in computer, robot, mobile phone, LED and so on. Compared with traditional solders, isotropic conductive adhesives have better working plasticity, creep resistance and heat resistance. In particular, isotropic conductive adhesives are more responsive in high density packaging than solder, which determines...
The effects of thermal cycling on shear strength and fracture mode of the nanosized Sn-3.0Ag-0.5Cu particulates reinforced Sn-58Bi composite solder were investigated in this paper. By using a self developed top-down method named Consumable-electrode Direct Current Arc technique, the Sn-3.0Ag-0.5Cu nanoparticles were successfully manufactured. The primary particle size of Sn-3.0Ag-0.5Cu nanoparticles...
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