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This paper applied a grain-refinement technique to develop an alternative poly-silicon floating gate. Micro-grain poly-silicon grains were refined by using a single-wafer LPCVD processor and adding hydrogen. The SIMS analysis of micro-grain poly-silicon films revealed that hydrogen contributed to poly-silicon formation but was not incorporated into the poly-silicon films. The grain size and dopant...
Sub-30 nm TFT CT NAND flash devices have been extensively studied. Although TFT devices were often believed to have much worse performance than bulk devices, our results show that as devices scale down to sub-30 nm, the DC characteristics (such as read current and subthreshold slope (S.S.)) approach those of the bulk devices because sub-30 nm TFT devices often contain no grain boundaries. The memory...
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