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The time dependent dielectric breakdown (TDDB) of four organo-silicate-glass (OSG) films with varying porosity (k=2.0, 2.5, 2.8 & 3.0) was investigated using metal-insulator-semiconductor (MIS) capacitors. Without any barrier, the dielectrics show lower TDDB-lifetimes under Cu ion drift conditions, where the OSG-2.8-film exhibits a better performance. Other results are that the damage caused by...
A novel anti-ESD RF SOI LIGBT with buried P-type layer (BPL) was proposed for improvement of its forward block characteristic. The proposed anti-ESD BPL RF SOI LIGBT consists of an additional buried P-type layer inserted between buried oxide layer and N-drift region based on the conventional RF SOI LIGBT structure and a built-in self-ESD-protection structure introduced in P-well region. When the proposed...
A novel test structure based on a planar capacitor design has been used for advanced barrier material evaluation and process optimization. This structure enables intrinsic reliability study of Cu/low-k interconnects. Various barrier materials such as CuMn self-forming barrier, ALD Ru, and PVD TaNTa on different dielectric films have been investigated to understand their intrinsic limits of barrier...
A novel test structure to study intrinsic reliability of barrier/low-k is proposed. The structure is based on a planar capacitor design where low-k film is deposited after the patterning of the capacitor, followed by metallization and Cu CMP. This so called low-k planar capacitor structure provides several unique capabilities to study various aspects of barrier/low-k TDDB compared with the conventional...
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