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Silicon nitride (SiN X ) thin films were deposited by means of an RF plasma enhanced chemical vapor deposition (PECVD) reactor using SiH 4 and N 2 gases. The refractive index of the SiN thin films increased from 1.5652 to 2.7621 as the SiH 4 /N 2 flow ratio was increased from 0.16 to 1.66, since the amount of Si in the film increased, while that of N decreased,...
A plasma dry etching technique has been applied to the fabrication of LiNbO 3 optical waveguide with a ridge structure for broadband operation. The etching characteristics of a LiNbO 3 single crystal have been investigated according to various ratios of Ar/C 3 F 8 gas mixture. A Ni metal was used as a dry etching mask. The effects of a gas mixture ratio on etching profile...
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