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An approach based on a solution‐based synthesis that produces a thermally stable Ag/oxide/Sb2Te3‐Te metal‐semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from...
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