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This work studies the interdiffusion effect of Er ions in Er2O3 and Si ions in SiO2 on the photoluminescent (PL) properties of Er2O3/SiO2 films. Er2O3 layers are deposited on thermally oxidized Si substrates by reactive radio-frequency magnetron sputtering. Different interdiffusion behaviors are observed by thermally treating films with rapid thermal annealing (RTA) and tube furnace annealing (TFA)...
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