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SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
Wafer bonding technology was investigated to integrate active photonic devices on a silicon on insulator (SOI) wafer for very compact photonic-integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI wafer was successfully obtained by a direct bonding method with a thermal annealing at 300-450degC under H2 atmosphere. The PL intensity of the SQW membrane structure...
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