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Lateral current injection DFB laser with a-Si surface grating was demonstrated, as step to realize membrane laser. The threshold current of 7.0 mA and the differential quantum efficiency of 43% from the front facet were obtained.
Semiconductor membrane laser with high index-contrast waveguide is promising for achieving low power consumption operation. As a step to realize a current injection (LCI) type membrane laser, GaInAsP/InP lateral current injection type Fabry-Perot lasers with 400 nm thin core layer, including compressively-strained 5 quantum-wells were realized by 2-step OMVPE regrowth on a semi-insulating InP substrate...
Toward injection type GaInAsP/InP membrane lasers consisting of high index contrast waveguide structure, lateral current injection type distributed-feedback lasers on a semi-insulating InP substrate were realized by an electron-beam lithography and organo-metallic vapor-phase-epitaxial regrowth. Single mode operation with a threshold current of 27 mA and a side-mode suppression ratio of 35dB at a...
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