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A silicon-on-insulator (SOI) device is an important integrated circuit technology containing an insulating material. In this paper, an SOI wafer consisting of n-type silicon grown on the surface of a SiO2 layer was adopted. Porous silicon on the SOI surface, prepared by an electrochemical etching method that connected the anode and cathode to the surface of the SOI wafer, displayed strong photoluminescence...
We study theoretically the simultaneous existence of large phononic and photonic bandgaps in chiral phoxonic crystals by topology optimization. By analyzing the effect of the chiral symmetry with different material orientations in both the square and triangular lattices, we discuss the most suitable structural properties for opening large phononic and photonic bandgap widths simultaneously and demonstrate...
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