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Thin films of SiO 2 have been prepared by reactive electron-beam evaporation at substrate temperatures of 200 to 300 °C and post-heating also in this temperature range. Typical values of the refractive index were 1.48 for as-deposited samples. The refractive index decreases with increasing post-heating temperature. Post-heated samples are more homogeneous and more stable in their optical properties...
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