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SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates...
With the commercial introduction of wide bandgap power devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in the last few years, the high power and high frequency power electronics applications have gained more attention. The fast switching speed and high temperature features of SiC MOSFET break the limit of the traditional silicon MOSFET. However, the EMI problem under high dI/dt and...
Due to the limitation in circuit measurements using current and voltage probes, the conventional ways of measuring switching losses lack the physical insight of the complicated witching process in power devices such as the SiC power MOSFET. This paper seeks to have a better understanding of the dynamic turn-on and turn-off processes of the SiC power MOSFET. Using a detailed finite element simulation...
A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero...
With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused...
This paper presents the characteristics of the first commercial 1200V 100A SiC MOSFET module and compares it with state-of-the-art silicon IGBT with the same rating. The results show that the 1200V SiC MOSFET has faster switching speed and much lower loss compared with silicon IGBT. Moreover, the silicon IGBT switching loss will increase significantly for higher operation temperature, while the SiC...
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