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Se‐doped Mg3.2Sb1.5Bi0.5‐based thermoelectric materials are revisited in this study. An increased ZT value ≈1.4 at about 723 K is obtained in Mg3.2Sb1.5Bi0.49Se0.01 with optimized carrier concentration ≈1.9 × 1019 cm−3. Based on this composition, Co and Mn are incorporated for the manipulation of the carrier scattering mechanism, which are beneficial to the dramatically enhanced electrical conductivity...
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