The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Since 3D NAND flash memory could provide more reliable storage than a 2D planar flash memory by relaxing the design rule of a memory cell, a kind of brand new programming technique, namely erase-free scheme, has been proposed to further enhance the endurance of a 3D SLC NAND flash memory. The erase-free scheme brings tons of benefits to flash memory performance and endurance. For example, the erase-free...
Over the past years, the adaptation of flash memory has seen a tremendous growth in a wide range of fields, with high-end applications demanding ever higher reliability and performance for storage devices. Even though a single-level-cell (SLC) flash memory can have a higher endurance and a lower access latency to better meet that requirement in comparison with a multi-level-cell (MLC) one, the rapid...
The reliability problem of modern flash-memory chips quickly deteriorates because of the nature of MLC chips. Although the vertical stacking of storage cells in 3D flash-memory chips dramatically increases the bit density, compared to 2D chips, it also results in severe disturbance problems. In this work, we propose to create sub-blocks in the MTD layer by considering different program disturb resistance...
Even though 3D flash memory presents a grand opportunity to huge-capacity non-volatile memory, it suffers from serious program disturbance problems. In contrast to the past efforts in error correction codes and the work in trading the space utilization for reliability, we propose a disturbance-relaxation scheme that can alleviate the negative effects caused by program disturbance inside a physical...
With the rapidly-increasing capacity demand over flash memory, 3D NAND flash memory has drawn tremendous attention as a promising solution to further reduce the bit cost and to increase the bit density. However, such advanced 3D devices will suffer more intensive program disturbance, compared to 2D NAND flash memory. Especially when multi-level-cell (MLC) technology is adopted, the deteriorated disturbance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.