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Thin TiBx film was formed on Si (100) substrate by dual beam ion assisted deposition method using two Ar+ ion beams of the same energy at 15 keV and TiB2 target. The microstructure of the film was examined using transmission electron microscopy methods in as - deposited state and during in - situ post - deposition heat treatment conducted at 20 - 550°C temperature range. The crystallization of TiB...
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