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We have observed a nonvolatile memory effect in interface conductance which can be modulated by polarization of a ferroelectric film stacked in semiconducting oxide films. The memory element is a ferroelectric-gate field-effect transistor (FeFET) with a heteroepitaxially grown stack of ZnO(n-type semiconductor)/Pb(Zr,Ti)O3(ferroelectric)/SrRuO3(bottom gate electrode) films, which exhibits a high ON/OFF...
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