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Low-noise amplifier is one of the most attractive applications of graphene transistors in the RF area. In this letter, a graphene amplifier MMIC is fabricated on the quasi-free-standing bilayer epitaxial graphene grown on SiC (0001) substrate. In order to realize both the high gain and low return loss, Au matching lines are designed as the input and output impedance match networks. The fabricated...
For the first time we report extremely thin SOI (ETSOI) CMOS with 22 nm gate length (LG) and sub-100 nm contacted gate pitch for system-on-chip (SoC) applications. Multi-Vt transistors are demonstrated with competitive drive currents (NFET/PFET) of 1150/1050 µA/µm at Ioff = 100 nA/µm for high performance (HP) and 920/880 µA/µm at Ioff = 1 nA/µm for low power (LP), respectively, at VDD = 1 V. High...
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