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In this paper, n-Ge1−x−ySixSny ternary alloy was successfully grown by using the Sb in situ doping technique through sputter epitaxy method. Ohmic contacts to n-Ge1−x−ySixSny are realized by shallow P implant. Group IV heterostructure p+-Ge1−xSnx / p−-Ge1−x−ySixSny / n-Ge1−x−ySixSny N-channel tunneling field-effect transistor (NTFET) is proposed and simulated. The narrow bandgap of Ge1−xSnx increases...
Novel structure of silicon-riched nitride (SRN)/silicon-riched oxide (SRO) is demonstrated using RF reactive magnetron sputtering and post-annealed, to increase the density of Si nanocrystals especially in the separated layer made of isolation medium, thus improving the transport ability of Si nanocrystal material. I–V characteristics shows the current of hybrid SRN/SRO system increases up to 2 orders...
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