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In this work, we propose high-density 3-D stacked NAND flash memory structure which has crystalline body stacks. We found the cross-talk between adjacent bodies in a body stack could be a severe problem for the first time. We analyzed the cross-talk and proposed a method to suppress the cross-talk. Key characteristics of proposed structure are investigated by using 3-D TCAD simulation tool.
We have investigated ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.
A new vertical NAND flash string with tube channel structure and top source contact has been proposed. The DC and program/erase characteristics of the proposed transistor is investigated using a 3-D TCAD simulation tool. This work is expected to show better P/E, retention, and reliability characteristics than Toshiba's structure.
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