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InSb1-xNx was grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. The XRD measurement showed that the full width at half maximum (FWHM) of the sample is as low as 0.04, which indicates that the film behaves very high quality. Besides, lattice mismatch between InSb1-xNx layer and InSb substrate was also detected from the XRD results, indicating that the nitrogen has been successfully...
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