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High speed InP-based travelling wave electrode (TWE) Mach-Zehnder modulators are presented and their integration capabilities to fabricate next generations of compact and high capacity transmitter components by utilizing so-called “monolithic-on-hybrid” integration approaches are emphasized.
The state-of-the art of medium and large scale InP-based Mach-Zehnder modulator PIC development is reported with regard to commercial fabrication of advanced transmitter components.
Development and characterization of monolithic, flip-chip compatible 2×50 Gb/s twin-IQ DQPSK MZ modulator chips - capable for hybrid assembly onto planar optical boards of advanced Tbit-capacity transmitter modules - is reported for the first time.
An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°-35° C, offering low PDL <;1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.
A monolithically integrated InP 90deg hybrid incorporating waveguide balanced photodiodes is presented. Stable performance is achieved over a wavelength range from 1530 nm to 1565 nm.
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