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We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike...
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