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A simulation method of non-uniform interface charges in pMOSFETs was presented in this paper. By using the 2D device simulation software, it increases the non-uniform interface charges array and calculation module. Bonded with the device negative bias temperature instability NBTI (Negative Bias Temperature Instability) degeneration model, the pure bias NBTI (Pure Drain Bias NBTI) degradation impact...
To explore the influence of the interface charges on the threshold voltage of pMOSFET, we present a novel device model in this paper. By dividing the gate oxide layer into several regions, and setting different interface charges in different regions, the relationship between the interface charges' length and the threshold voltage is well simulated by using 2D numerical simulation, in which the conditions...
By using the MOS energy band diagram and Negative Bias Temperature Instability (NBTI) degradation model, an equation of NBTI degradation with channel doping concentration has been derived. Meanwhile, a new NBTI inhibition method by using different doping concentration has been proposed. The quantitatively calculation and simulation results show that, with the proposed method, the NBTI inhibition rate...
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