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For suppressing of the conducted electromagnetic interference (EMI), passive EMI filter (PEF) is the most widely applied technique at present. The near-field coupling due to PEF passive components layout has great influence on filtering performance. Currently, the layout of PEF components completely dependents on the experience of EMC engineer. However, there is a lack in systematic design method...
Gallium nitride high electron mobility transistors (GaN HEMTs) are promising switching devices in high-efficiency and high-density dc–dc converters due to their fast switching speed and small conduction resistance. However, GaN HEMTs are very sensitive to parasitic inductance because of their high switching speed, low-threshold voltage, and small driving safety margin. Parasitic inductance can cause...
Magnetic components are generally used in electrical devices. However the behavior in terms of radiation and coupling to the environment of these components is not widely explored. This study presents a comparative analysis of the magnetic field distribution of a symmetrical and an asymmetrical toroidal core. A simple analytical model based on finite element analysis is developed. The effects of the...
A novel low-inductance packaging layout for Full-SiC (Silicon Carbide) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Module with split damping capacitors embedding inside is proposed in this paper. The 3-Demision model of the optimized layout was built and analyzed with ANSYS Q3D. The total self-inductance of the single commutation loop is only 6.2nH. Additionally, 55V voltage spike over...
This paper focuses on the electromagnetic interference (EMI) research and analysis of the MHz switching frequency GaN MOSFET based on the LLC resonant DC-DC converter. In this paper, first, the CM coupling paths are studied to get simplified models. Then the impact of the parasitic capacitors (both the capacitors to the ground and the capacitors in the devices) on the CM current are analyzed. Finally...
This paper carefully discusses the interaction between the bus capacitors and the parasitic inductances in an integrated DC-DC converter module. The design principles of the bus capacitors are presented and validated by simulation results. In addition, an optimized PCB layout with split bus capacitors is proposed for enhancement-mode Gallium-Nitride (eGaN) transistors based integrated DC-DC power...
A 2 kW single phase PFC active IPEM (integrated power electronic module), consisting of full bridge rectifier diodes, current sensing resistor and boost converter, has been developed employing CoolMOS and SiC diodes in this paper. The electromagnetic interference mechanism in the module is demonstrated. In order to reduce the voltage spike of power devices, three different design patterns are compared...
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